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Tuesday, August 4, 2020 | History

2 edition of Development of Si[1-x]Ge[x] technology for microwave sensing applications found in the catalog.

Development of Si[1-x]Ge[x] technology for microwave sensing applications

Development of Si[1-x]Ge[x] technology for microwave sensing applications

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  • 29 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Silicon alloys.,
  • Ellipsometry.

  • Edition Notes

    StatementRafael A. Mena ... [et al.].
    SeriesNASA technical memorandum -- 106157., NASA technical memorandum -- 106157.
    ContributionsMena, Rafael A., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL14700473M

    Mechanical alloying using a planetary ball mill allowed us to obtain two homogeneous systems formed by units with nanometer size and MnCo Fe Ge 1−x Si x stoichiometry (x = 0 and ). The phase evolution of the systems with the milling time was analyzed using X .   In article number , Yang‐Kook Sun and co‐workers report the microstructural degradation of Ni‐rich Li[Ni x Co y Mn 1−x−y]O 2 (NCM) cathodes during calendar aging. Because an electric vehicle (EV) is intermittently used and remains stationary for long periods in the fully charged state, calendar aging significantly affects the lifetimes of EVs.

    Zirconia and 10%, 20%, and 30% cerium-doped zirconia nanoparticles (ZCO), ZCO-1, ZCO-2, and ZCO-3, respectively, were prepared using auto-combustion method. Binary nanohybrids, [email protected] and [email protected] (rGO = reduced graphene oxide), and ternary nanohybrids, [email protected]@MoS2 and [email protected]@MoS2, have been prepared with an anticipation of a . Types of semiconductor materials. Group IV elemental semiconductors, (C, Si, Ge, Sn); Group IV compound semiconductors; Group VI elemental semiconductors, (S, Se, Te); III–V semiconductors: Crystallizing with high degree of stoichiometry, most can be obtained as both n-type and have high carrier mobilities and direct energy gaps, making them useful .

    New Developments in Optimization Technology for RF, Wireless and Microwave Circuit Design, Integrating EM Simulations J.W. Bandler Simulation Optimization Systems Research Laboratory. Journal of Applied Physics reports significant new experimental and theoretical results in applied physics research. Topics include materials physics, magnetism, applied biophysics, devices and sensors, nanoscale systems, surfaces and interfaces.


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Development of Si[1-x]Ge[x] technology for microwave sensing applications Download PDF EPUB FB2

Get this from a library. Development of Si[1-x]Ge[x] technology for microwave sensing applications. [Rafael A Mena; United States.

National Aeronautics and Space Administration.;]. • First demonstrated for microwave power in • In x Ga 1-x As channel, with x - Enhanced electron transport - Increased conduction band discontinuity, allowing higher channel current - Quantum Development of Si[1-x]Ge[x] technology for microwave sensing applications book channel provides improved carrier confinement • Power devices typically use “double heterojunction” layer structureFile Size: 2MB.

Qiu, B. Weng (co-first author), L. Li, X. Li, and Z. Shi, “Large-scale self-assembled epitaxial growth of highly-ordered 3D micro/nano single-crystalline PbSe pyramid arrays by selective chemical bath deposition”, Materials Research Express 2, () B.

Weng *, J. Qiu, W. Ge, and Z. Shi, “Numerical Analysis of CdS/PbSe Room Temperature Mid-infrared. RADAR Wavelengths and Frequencies used in Active Microwave Remote Sensing Investigations Band Designations (common wavelengths Wavelength Frequency shown in parentheses) in cm in GHz _____ Frequency band Ka K Ku X C S L P Wavelength (cm) 15 30   The conventional terminating-type power sensor based on CMOS technology can absorb microwave power and convert it into heat [1–4], according to the Seebeck effect, generating a corresponding dc voltage proportional to the rmore, the inline thermocouple-based power sensor [] permits part of the power to be utilized by.

Si 1-x Ge x (SiGe) Detector Arrays Like the other two alloy semiconductors mentioned above, SiGe is another example of material that can be used for the fabrication of SWIR detectors.

The key attractive feature of SiGe IR detectors is that they can be fabricated on large diameter Si substrates with size as large as inch diameter using Cited by: The Si 1-x Ge x alloys form a solid solution that is miscible over the entire range of Ge atomic fractions x. The addition of Ge to Si decreases the optical bandgap for absorption at longer wavelengths, depending on composition and layer strain.

There has been rapid progress in the development of technology for miniaturization of inductors. Development of Novel Si(x) Ge (1-x) Tunable Quantum Dot Lateral P-I-N Photodiode (QDLP) for near-infrared detection applications (Industrial Grant, Lead Researcher) Development of Silicon-on-insulator optical phase modulator based on microring resonator (MRR).

A schematic band diagram of an indirect GeSn alloy and the mechanism of PL spectra formation are plotted in Fig. E D, E ID, and ΔE = E D − E ID are energies for the direct, indirect bandgap and their separation, respectively.

In indirect material, E D > E tical work has predicted that 6% or higher of Sn in a relaxed Ge 1–x Sn x could result in a direct : Wei Du, Shui-Qing Yu. Optical Engineering (OE) publishes peer-reviewed papers reporting on research, development, and applications of optics, photonics, and imaging science and engineering.

Journal of Applied Remote Sensing Journal of Astronomical Telescopes, Instruments, and Systems Digitally controlled microwave frequency comb based on Mach–Zehnder.

GE Sensing DigitalFlow™ XMTi Panametrics Ultrasonic Flow Transmitter for Liquids Programming Manual (1 and 2-Channel) PD May DigitalFlow™ is a GE Panametrics product. GE Panametrics has joined other GE high-technology sensing businesses under a new name—GE Industrial, Sensing.

Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the s. The compound is a very hard material that has a Wurtzite crystal wide band gap of eV affords it special [clarification needed] properties for applications in optoelectronic, high-power and high-frequency devices.

For example, GaN is Chemical formula: GaN. Thin microcrystalline films of the metastable semiconducting alloy Ge 1-x Sn x (x≊) have been formed using excimer laser radiation to crystallize amorphous sputtered films on glass and.

Henry H Radamson is currently professor at the Microelectronics, and the head of Optoelectronic Innovation Center in Chinese Academy of Sciences.

Henry does research in nanomaterials. 2 IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING Fig. Block diagram of the TerraSAR-X project structure with its governing body of the Joint Committee, as well as the three main elements space, ground, 4/C and service segment.

to provide data to the science community as explained in Section IV. In addition, DLR is responsible for the. Shown is a cross-section of the p-i-n structure on silicon with Ge/Si 1−x Ge x multi-quantum-wells (MQWs) on a relaxed Si 1−z Ge z buffer. Figure reproduced with Cited by: Proc.

SPIEPhysical Concepts and Materials for Novel Optoelectronic Device Applications II, pg (19 November ); doi: / Herein, we describe the design, fabrication and gas sensing tests of p-Co3O4/n-ZnO nanocomposites.

Specifically, arrays of oriented ZnO nanoparticles were grown on alumina substrates by plasma enhanced–chemical vapor deposition (PECVD) and used as templates for the subsequent PECVD of Co3O4 nanograins.

Structural, morphological and compositional. Several studies have been reported on the quantification of Ge in Si 1‐x Ge x using SIMS with oxygen or cesium primary ions.

Most of them were limited to lower Ge concentrations. In this paper, we discussed procedures to quantify Ge content in Si 1‐x Ge x with x ranging from to by using low‐energy Cs + and O 2 + primary beams.

Since the discovery of X-rays over a century ago the techniques applied to the engineering of X-ray sources have remained relatively unchanged. From the inception of thermionic electron sources, which, due to simplicity of fabrication, remain central to almost all X-ray applications, there have been few fundamental technological advances.

However, with the Cited by:. Fabrication and Analysis of Epitaxially Grown Ge _{1-x} Sn _x Microdisk Resonator With nm Free-Spectral Range published in IEEE Photonics Technology Letters (10/19/11) Kelley was selected for 2nd place Best Student Paper at IEEE Photonics (10/10/11) Off-resonant coupling between a single quantum dot and a nanobeam photonic crystal cavity.

Based upon the obtained data, we propose a type-I W-like Si 1−y Ge y /Si 1−x Ge x /Ge/Si 1−x Ge x /Si 1−y Ge y quantum wells heterostructure optimized in terms of compositions and thicknesses.

Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias by: 7. Here D is the number of documents, D 0 = 0 is the base number of documents, Y is the year, Y 0 = is the base year, α = ± is the initial rate—meaning approximately one or two documents per year to begin with—and τ = ± is the time constant—meaning an increase by a factor of e approximately every five years.

This time constant implies that Cited by: